IC POWER MOSFET 1200V HIP247
Win Source Part Number: 1353041-SCTWA30N120
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Fake Threat In the Open Market: 41 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: HiP247™ Long Leads
Base Product Number: SCTWA30
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Power Dissipation (Max): 270W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
IC POWER MOSFET 1200V HIP247
IC POWER MOSFET 1200V HIP247
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SCTWA30N120-ND | 1353041-SCTWA30N120 | SCTWA30N120 | SCTWA30N120 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||
| Package Type | TO-247; TO-247-3 | SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 |
| QG | 105 nC | |||
| PD | 270000 milliwatts | 270000 milliwatts |
