STMicroelectronics, Inc. Single FETs, MOSFETs SCTWA30N120

Description
IC POWER MOSFET 1200V HIP247
Request a Quote Datasheet
Description
IC POWER MOSFET 1200V HIP247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SCTWA30N120-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SCTWA30N120-ND
Single FETs, MOSFETs SCTWA30N120-ND
IC POWER MOSFET 1200V HIP247

IC POWER MOSFET 1200V HIP247

Buy Now Datasheet
Singapore
1200 V 45 A 90 mOhm MOSFET Transistor
278-SCTWA30N120
1200 V 45 A 90 mOhm MOSFET Transistor 278-SCTWA30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package Product overview: SCTWA30N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 45 A, 90 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 45 A, 90 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTWA30N120 can be used for catalog matching and distributor lookup.

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package Product overview: SCTWA30N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 45 A, 90 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 45 A, 90 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCTWA30N120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SCTWA30N120 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCTWA30N120
Single FETs, MOSFETs SCTWA30N120
IC POWER MOSFET 1200V HIP247

IC POWER MOSFET 1200V HIP247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1353041-SCTWA30N120 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1353041-SCTWA30N120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1353041-SCTWA30N120
Win Source Part Number: 1353041-SCTWA30N120 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 200°C (TJ) Fake Threat In the Open Market: 41 pct. MSL Level: 1 (Unlimited) Mfr: STMicroelectronics Package: Tube Product Status: Active Package / Case: TO-247-3 Supplier Device Package: HiP247™ Long Leads Base Product Number: SCTWA30 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V Power Dissipation (Max): 270W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1353041-SCTWA30N120
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Fake Threat In the Open Market: 41 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: HiP247™ Long Leads
Base Product Number: SCTWA30
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Power Dissipation (Max): 270W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCTWA30N120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCTWA30N120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCTWA30N120
IC POWER MOSFET 1200V HIP247

IC POWER MOSFET 1200V HIP247

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number SCTWA30N120-ND 278-SCTWA30N120 SCTWA30N120 1353041-SCTWA30N120 SCTWA30N120
Product Name Single FETs, MOSFETs 1200 V 45 A 90 mOhm MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247; TO-247-3 TO-247; TO-247-3 SOT3 TO-247; TO-247-3
V(BR)DSS 1200 volts
IDSS 45000 milliamps
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