N-Channel 1200V 36A (Tc) 278W (Tc) Through Hole HiP247™
Manufacturer: STMicroelectronics
Win Source Part Number: 1324371-SCTW40N120G2
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Power Dissipation (Max): 278W (Tc)
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-SCTW40N120G2V
Drive Voltage (Max Rds On, Min Rds On): 18V
RoHS Status: ROHS3 Compliant
SILICON CARBIDE POWER MOSFET 120
SIC MOSFET, N-CH, 1.2KV, 36A, HIP247 ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-SCTW40N120G2V-ND | 1324371-SCTW40N120G2V | SCTW40N120G2V | 40AJ8414 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Mosfet, N-Ch, 1.2Kv, 36A, Hip247 Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-3 |
| QG | 61 nC |
