SILICON CARBIDE POWER MOSFET 120
N-Channel 1200V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7
N-Channel 1200V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7
N-Channel 1200V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7
SIC MOSFET, N-CH, 1.2KV, 90A, H2PAK ROHS COMPLIANT: YES
SILICON CARBIDE POWER MOSFET 120
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SCTH70N120G2V-7 | 497-SCTH70N120G2V-7TR-ND | 40AJ8412 | SCTH70N120G2V-7 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Sic Mosfet, N-Ch, 1.2Kv, 90A, H2Pak Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||
| V(BR)DSS | 1200 volts | |||
| IDSS | 90000 milliamps |
