The N-Channel MOSFET from STMicroelectronics features a maximum drain-source voltage of 1200 V and a continuous drain current rating of 20 A at a case temperature of 25 ¬8C. It is designed to operate at high temperatures, with a maximum junction temperature of 200 ¬8C. The device has a total power dissipation capability of 153 W and is housed in a HiP247 package, which enhances its thermal performance. This MOSFET is AEC-Q101 qualified, making it suitable for automotive applications. It exhibits a low on-resistance of 189 mOc at 150 ¬8C, ensuring efficient operation. The device is also characterized by a robust intrinsic body diode and low gate charge, which contribute to its fast switching capabilities. Applications include motor drives, electric vehicle chargers, high voltage DC-DC converters, and switch mode power supplies. The product is RoHS compliant, aligning with environmental standards.
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package Product overview: SCT20N120AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 1200 V, 20 A, 189 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 1200 V, 20 A, 189 mOhm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT20N120AG can be used for catalog matching and distributor lookup.
Win Source Part Number: 1278141-SCT20N120AG
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 153W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: HiP247™
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-SCT20N120AG
Base Product Number: SCT20
Drive Voltage (Max Rds On, Min Rds On): 20V
N-Channel 1200V 20A (Tc) 153W (Tc) Through Hole HiP247™
MOSFET, N-CH, 1.2KV, 20A, 200DEG C, 153W ROHS COMPLIANT: YES
SICFET N-CH 1200V 20A HIP247
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SCT20N120AG | 1278141-SCT20N120AG | 2024806P | 2024778 | 497-SCT20N120AG-ND | 69AH2149 | SCT20N120AG |
| Product Name | Automotive 1200 V 20 A 189 mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 20A, 200Deg C, 153W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | SOT3 | Hip-247 | Hip247 | TO-247; TO-247-3 | TO-3 | Through Hole | |
| Transistor Technology / Material | Sic | Silicon Carbide | |||||
| MOSFET Operating Mode | Depletion |
