STMicroelectronics, Inc. Single FETs, MOSFETs SCT070W120G3-4

The SCT070W120G3-4 is a silicon carbide N-channel MOSFET designed for high-efficiency switching applications such as power supplies and DC-DC converters. It is packaged in a HiP247-4 case with a maximum drain-source voltage of 1200 V and a typical on-resistance of 63 mΩ at 25 °C, supporting a continuous drain current of 30 A at 25 °C and 29 A at 100 °C. The device operates with a junction temperature up to 200 °C and features a source sensing pin for improved efficiency. Thermal resistance from junction to case is 0.74 °C/W. The package dimensions are specified with a maximum height of 10.20 mm, body width of 21.10 mm, and lead pitch of 2.64 mm. It meets RoHS compliance and is rated for a storage temperature range of -55 °C to 200 °C.