AUTOMOTIVE-GRADE SILICON CARBIDE Product overview: SCT040H65G3AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT040H65G3AG can be used for catalog matching and distributor lookup.
AUTOMOTIVE-GRADE SILICON CARBIDE
Manufacturer: STMicroelectronics
Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR) Cut Tape (CT)
Product Status: Active
Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: H2PAK-7
AUTOMOTIVE-GRADE SILICON CARBIDE
AUTOMOTIVE-GRADE SILICON CARBIDE
AUTOMOTIVE-GRADE SILICON CARBIDE
AUTOMOTIVE-GRADE SILICON CARBIDE
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors |
| Product Number | 278-SCT040H65G3AG | SCT040H65G3AG | 497-SCT040H65G3AGDKR-ND | SCT040H65G3AG | |
| Product Name | Automotive MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 650 volts | 650 volts | |||
| PD | 221 milliwatts | 221000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
