STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P300NH02L P300NH02L

Description
Manufacturer: STMicroelectronics Win Source Part Number: 060984-P300NH02L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 109.4nC @ 10V Max Input Capacitance: 7055pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 060984-P300NH02L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 109.4nC @ 10V Max Input Capacitance: 7055pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - P300NH02L - 060984-P300NH02L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P300NH02L
060984-P300NH02L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P300NH02L 060984-P300NH02L
Manufacturer: STMicroelectronics Win Source Part Number: 060984-P300NH02L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 109.4nC @ 10V Max Input Capacitance: 7055pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 060984-P300NH02L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 109.4nC @ 10V
Max Input Capacitance: 7055pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 060984-P300NH02L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - P300NH02L
Polarity N-Channel; N-Channel
V(BR)DSS 24 volts
PD 300000 milliwatts
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