STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P200NF04L P200NF04L

Description
Manufacturer: STMicroelectronics Win Source Part Number: 060971-P200NF04L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 90nC @ 4.5V Max Input Capacitance: 6400pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - P200NF04L - 060971-P200NF04L - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 060971-P200NF04L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 90nC @ 4.5V Max Input Capacitance: 6400pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P200NF04L - 060971-P200NF04L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P200NF04L
060971-P200NF04L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P200NF04L 060971-P200NF04L
Manufacturer: STMicroelectronics Win Source Part Number: 060971-P200NF04L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 90nC @ 4.5V Max Input Capacitance: 6400pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 060971-P200NF04L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 90nC @ 4.5V
Max Input Capacitance: 6400pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 060971-P200NF04L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - P200NF04L
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 300000 milliwatts
Unlock Full Specs
to access all available technical data