STMicroelectronics, Inc. Memory NAND512W3A2BN6E

Description
IC FLASH 512MBIT PARALLEL 48TSOP
Request a Quote Datasheet
Description
IC FLASH 512MBIT PARALLEL 48TSOP
Request a Quote Datasheet

Suppliers

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Product
Description
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IC FLASH 512MBIT PARALLEL 48TSOP

IC FLASH 512MBIT PARALLEL 48TSOP

Supplier's Site Datasheet
Memory - 497-5040-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 50ns 48-TSOP

FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 50ns 48-TSOP

Buy Now Datasheet
Memory - Flash - NAND512W3A2BN6E - 059814-NAND512W3A2BN6E - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - NAND512W3A2BN6E
059814-NAND512W3A2BN6E
Memory - Flash - NAND512W3A2BN6E 059814-NAND512W3A2BN6E
Manufacturer: STMicroelectronics Win Source Part Number: 059814-NAND512W3A2BN 6E Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 512Mb (64M x 8) Access Time: 50ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): K9F1208U0C-PCB0; NAND512W3A0BN6E; NAND512W3A0AN1; Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 059814-NAND512W3A2BN6E
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Access Time: 50ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): K9F1208U0C-PCB0; NAND512W3A0BN6E; NAND512W3A0AN1;
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - NAND512W3A2BN6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512W3A2BN6E
Integrated Circuits (ICs) - Memory - Memory NAND512W3A2BN6E
IC FLASH 512MBIT PARALLEL 48TSOP

IC FLASH 512MBIT PARALLEL 48TSOP

Supplier's Site
Memory - NAND512W3A2BN6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP

Buy Now Datasheet
IC FLASH 512MBIT PARALLEL 48TSOP

IC FLASH 512MBIT PARALLEL 48TSOP

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NAND512W3A2BN6E 497-5040-ND 059814-NAND512W3A2BN6E NAND512W3A2BN6E NAND512W3A2BN6E NAND512W3A2BN6E
Product Name Memory Memory Memory - Flash - NAND512W3A2BN6E Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; FLASH - NAND Flash Flash; FLASH Flash; Non-Volatile Flash; FLASH Flash; Flash
Access Time 50 ns 50 ns 50 ns 50 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
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