STMicroelectronics, Inc. Transistor MTP3N60

Description
TRANSISTOR, HIGH ENERGY POWER FET, N-CHANNEL ENHANCEMENT- MODE, SILICONE GATE, 3A, 600V, TO- 220AB. FREE 2 YEAR RADWELL WARRANTY
Description
TRANSISTOR, HIGH ENERGY POWER FET, N-CHANNEL ENHANCEMENT- MODE, SILICONE GATE, 3A, 600V, TO- 220AB. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 32461830 - Radwell International
Willingboro, NJ, United States
Transistor
32461830
Transistor 32461830
TRANSISTOR, HIGH ENERGY POWER FET, N-CHANNEL ENHANCEMENT- MODE, SILICONE GATE, 3A, 600V, TO- 220AB. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, HIGH ENERGY POWER FET, N-CHANNEL ENHANCEMENT- MODE, SILICONE GATE, 3A, 600V, TO- 220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 32461830
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

Interfet -  - Micross Components, Inc.
Micross Components, Inc.
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1540D - 855042-2SA1540D - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor - QPD0020 - Qorvo
Specs
Transistor Technology / Material DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details