STMicroelectronics, Inc. Transistor MTP3N60

Description
TRANSISTOR, HIGH ENERGY POWER FET, N-CHANNEL ENHANCEMENT- MODE, SILICONE GATE, 3A, 600V, TO- 220AB. FREE 2 YEAR RADWELL WARRANTY
Request a Quote
Description
TRANSISTOR, HIGH ENERGY POWER FET, N-CHANNEL ENHANCEMENT- MODE, SILICONE GATE, 3A, 600V, TO- 220AB. FREE 2 YEAR RADWELL WARRANTY
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistor - 32461830 - Radwell International
Willingboro, NJ, United States
Transistor
32461830
Transistor 32461830
TRANSISTOR, HIGH ENERGY POWER FET, N-CHANNEL ENHANCEMENT- MODE, SILICONE GATE, 3A, 600V, TO- 220AB. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, HIGH ENERGY POWER FET, N-CHANNEL ENHANCEMENT- MODE, SILICONE GATE, 3A, 600V, TO- 220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 32461830
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules - 6MS16017P43W40382NOSA1-ND - DigiKey
Specs
Package Type Module
View Details
2 suppliers
2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor - QPD0005 - Qorvo
Specs
Transistor Technology / Material 2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type DFN
View Details