STMicroelectronics, Inc. Memory M27C160-90B1

Description
EPROM - OTP Memory IC 16Mb (2M x 8, 1M x 16) Parallel 90ns 42-PDIP
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Description
EPROM - OTP Memory IC 16Mb (2M x 8, 1M x 16) Parallel 90ns 42-PDIP
Request a Quote
Datasheet
Datasheet Summary
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The M27C160-90B1 is a 16 Mbit (2 Mb x 8 or 1 Mb x 16) UV EPROM and OTP EPROM from Quarktwin Technology Ltd. It operates with a supply voltage of 5V ± 10% during read operations and features an access time of 50 ns. The device is configurable for byte-wide or word-wide data formats and serves as a low-power alternative to 16 Mbit Mask ROMs, with an active current of 70 mA at 8 MHz and a standby current of 100 µA. Programming of the memory requires a voltage of 12.5V ± 0.25V, with a programming time of 50 µs per word. The electronic signature includes a manufacturer code of 20h and a device code of B1h. The product is available in multiple package types, including FDIP42W, PDIP42, SDIP42, PLCC44, and SO44, and is compliant with ECOPACK® standards. This memory device is suitable for applications requiring reliable data storage with efficient power consumption.

Datasheet Summary
Powered by GS/AI

The M27C160-90B1 is a 16 Mbit (2 Mb x 8 or 1 Mb x 16) UV EPROM and OTP EPROM from Quarktwin Technology Ltd. It operates with a supply voltage of 5V ± 10% during read operations and features an access time of 50 ns. The device is configurable for byte-wide or word-wide data formats and serves as a low-power alternative to 16 Mbit Mask ROMs, with an active current of 70 mA at 8 MHz and a standby current of 100 µA. Programming of the memory requires a voltage of 12.5V ± 0.25V, with a programming time of 50 µs per word. The electronic signature includes a manufacturer code of 20h and a device code of B1h. The product is available in multiple package types, including FDIP42W, PDIP42, SDIP42, PLCC44, and SO44, and is compliant with ECOPACK® standards. This memory device is suitable for applications requiring reliable data storage with efficient power consumption.

Suppliers

Company
Product
Description
Supplier Links
Memory - M27C160-90B1-ND - DigiKey
Thief River Falls, MN, United States
EPROM - OTP Memory IC 16Mb (2M x 8, 1M x 16) Parallel 90ns 42-PDIP

EPROM - OTP Memory IC 16Mb (2M x 8, 1M x 16) Parallel 90ns 42-PDIP

Buy Now Datasheet
Memory - M27C160-90B1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 16Mbit Parallel 90 ns 42-PDIP

EPROM - OTP Memory IC 16Mbit Parallel 90 ns 42-PDIP

Buy Now Datasheet
IC EPROM 16MBIT PARALLEL 42DIP

IC EPROM 16MBIT PARALLEL 42DIP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - M27C160-90B1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M27C160-90B1
Integrated Circuits (ICs) - Memory - Memory M27C160-90B1
IC EPROM 16MBIT PARALLEL 42DIP

IC EPROM 16MBIT PARALLEL 42DIP

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number M27C160-90B1-ND M27C160-90B1 M27C160-90B1 M27C160-90B1
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EPROM EPROM; EPROM EPROM; EPROM EPROM; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits
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