STMicroelectronics, Inc. Memory - EPROM - M27C1001-10F1 M27C1001-10F1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 087697-M27C1001-10F1 Packaging: Tube/Rail Mounting: Through Hole Technology: EPROM - UV Memory Size: 1Mb (128K x 8) Access Time: 100ns Family Name: M27C1001 Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 32-CDIP Frit Seal with Window Supply Voltage - Operating: 4.5 V to 5.5 V Memory Format: EPROM Alternative Parts (Cross-Reference): SMJ27C010A-12JM; SMJ27C010A-15JM; AT27C010-12DC; Introduction Date: September 01, 1998 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
  • Memory - EPROM - M27C1001-10F1 - 087697-M27C1001-10F1 - Win Source Electronics
    Win Source Electronics
  • Memory - M27C1001-10F1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Memory - 497-1627-5-ND - DigiKey
    DigiKey
  • Memory - M27C1001-10F1 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Eprom, 1Mbit, 100Ns, Dip-32; Memory Size Stmicroelectronics - 37M4682 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Memory - M27C1001-10F1 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Integrated Circuits (ICs) - Memory - Memory - M27C1001-10F1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 087697-M27C1001-10F1 Packaging: Tube/Rail Mounting: Through Hole Technology: EPROM - UV Memory Size: 1Mb (128K x 8) Access Time: 100ns Family Name: M27C1001 Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 32-CDIP Frit Seal with Window Supply Voltage - Operating: 4.5 V to 5.5 V Memory Format: EPROM Alternative Parts (Cross-Reference): SMJ27C010A-12JM; SMJ27C010A-15JM; AT27C010-12DC; Introduction Date: September 01, 1998 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EPROM - M27C1001-10F1 - 087697-M27C1001-10F1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - EPROM - M27C1001-10F1
087697-M27C1001-10F1
Memory - EPROM - M27C1001-10F1 087697-M27C1001-10F1
Manufacturer: STMicroelectronics Win Source Part Number: 087697-M27C1001-10F1 Packaging: Tube/Rail Mounting: Through Hole Technology: EPROM - UV Memory Size: 1Mb (128K x 8) Access Time: 100ns Family Name: M27C1001 Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 32-CDIP Frit Seal with Window Supply Voltage - Operating: 4.5 V to 5.5 V Memory Format: EPROM Alternative Parts (Cross-Reference): SMJ27C010A-12JM; SMJ27C010A-15JM; AT27C010-12DC; Introduction Date: September 01, 1998 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 087697-M27C1001-10F1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: EPROM - UV
Memory Size: 1Mb (128K x 8)
Access Time: 100ns
Family Name: M27C1001
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 32-CDIP Frit Seal with Window
Supply Voltage - Operating: 4.5 V to 5.5 V
Memory Format: EPROM
Alternative Parts (Cross-Reference): SMJ27C010A-12JM; SMJ27C010A-15JM; AT27C010-12DC;
Introduction Date: September 01, 1998
ECCN: EAR99
Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Memory - M27C1001-10F1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
M27C1001-10F1
Memory M27C1001-10F1
IC EPROM 1MBIT PARALLEL 32CDIP

IC EPROM 1MBIT PARALLEL 32CDIP

Supplier's Site
Memory - 497-1627-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
497-1627-5-ND
Memory 497-1627-5-ND
EPROM - UV Memory IC 1Mb (128K x 8) Parallel 100ns 32-CDIP Frit Seal with Window

EPROM - UV Memory IC 1Mb (128K x 8) Parallel 100ns 32-CDIP Frit Seal with Window

Buy Now Datasheet
Allied Electronics, Inc.
Fort Worth, TX, USA
EPROM; 1 MBIT UV EPROM; 5V; 100; FDIP32W; 2 V (MIN.); -0.3 V (MAX.); 0; +70
70013639
EPROM; 1 MBIT UV EPROM; 5V; 100; FDIP32W; 2 V (MIN.); -0.3 V (MAX.); 0; +70 70013639
1 Mbit UV and OTP EPROM, 5 V Supply Voltage, 11.5 V (Min.) Program Voltage Access time is 35 ns Low power consumption Programming time is 100 μs⁄word Electronic signature EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). Ideally suited for microprocessor systems requiring large programs and is organized as 131,072 words of 8 bits. The FDIP32W (window ceramic frit-seal package) and the LCCC32W (leadless chip carrier package) have a transparent lids which allow the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

1 Mbit UV and OTP EPROM, 5 V Supply Voltage, 11.5 V (Min.) Program Voltage

  • Access time is 35 ns
  • Low power consumption
  • Programming time is 100 μs⁄word
  • Electronic signature
    EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). Ideally suited for microprocessor systems requiring large programs and is organized as 131,072 words of 8 bits. The FDIP32W (window ceramic frit-seal package) and the LCCC32W (leadless chip carrier package) have a transparent lids which allow the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.
Supplier's Site
Memory - M27C1001-10F1 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
M27C1001-10F1
Memory M27C1001-10F1
IC EPROM 1MBIT PARALLEL 32CDIP

IC EPROM 1MBIT PARALLEL 32CDIP

Supplier's Site Datasheet
Eprom, 1Mbit, 100Ns, Dip-32; Memory Size Stmicroelectronics - 37M4682 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Eprom, 1Mbit, 100Ns, Dip-32; Memory Size Stmicroelectronics
37M4682
Eprom, 1Mbit, 100Ns, Dip-32; Memory Size Stmicroelectronics 37M4682
EPROM, 1MBIT, 100NS, DIP-32; Memory Size:1Mbit; EPROM Memory Configuration:128K x 8bit; No. of Pins:32Pins; Memory Case Style:DIP; Supply Voltage Min:4.5V; Supply Voltage Max:5V; Operating Temperature Min:0°C; Access Time:100ns RoHS Compliant: Yes

EPROM, 1MBIT, 100NS, DIP-32; Memory Size:1Mbit; EPROM Memory Configuration:128K x 8bit; No. of Pins:32Pins; Memory Case Style:DIP; Supply Voltage Min:4.5V; Supply Voltage Max:5V; Operating Temperature Min:0°C; Access Time:100ns RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - M27C1001-10F1 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
M27C1001-10F1
Memory M27C1001-10F1
EPROM - UV Memory IC 1Mbit Parallel 100 ns 32-CDIP Frit Seal with Window

EPROM - UV Memory IC 1Mbit Parallel 100 ns 32-CDIP Frit Seal with Window

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - M27C1001-10F1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M27C1001-10F1
Integrated Circuits (ICs) - Memory - Memory M27C1001-10F1
IC EPROM 1MBIT PARALLEL 32CDIP

IC EPROM 1MBIT PARALLEL 32CDIP

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Allied Electronics, Inc. Lingto Electronic Limited Newark, An Avnet Company Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 087697-M27C1001-10F1 M27C1001-10F1 497-1627-5-ND 70013639 M27C1001-10F1 37M4682 M27C1001-10F1 M27C1001-10F1
Product Name Memory - EPROM - M27C1001-10F1 Memory Memory EPROM; 1 MBIT UV EPROM; 5V; 100; FDIP32W; 2 V (MIN.); -0.3 V (MAX.); 0; +70 Memory Eprom, 1Mbit, 100Ns, Dip-32; Memory Size Stmicroelectronics Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EPROM; EPROM EPROM; EPROM - UV EPROM EPROM EPROM; EPROM EPROM; EPROM EPROM; Non-Volatile
Access Time 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to ? C (32 to ? F) 0 C (32 F) 0 to 70 C (32 to 158 F)
Package Type DIP; 32-CDIP Frit Seal with Window DIP; 32-CDIP (0.600", 15.24mm) Window "32-CDIP (0.600"", 15.24mm) Window" FDIP32W DIP DIP; 32-CDIP (0.600\", 15.24mm) Window
Unlock Full Specs
to access all available technical data

Similar Products

SN74ACT3632 512 x 36 x 2 bidirectional synchronous FIFO memory - SN74ACT3632-15PQG4 - Texas Instruments
Texas Instruments
SN74ACT3632 512 x 36 x 2 bidirectional synchronous FIFO memory
SN74ACT3632-15PQG4
Specs
Memory Category FIFO
Package Type BQFP
View Details
5 suppliers
Memory - AS5C512K8 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C512K8
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882749 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882749
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - AM29F002BT-55JF - ODG (Origin Data Global)
Infineon Technologies AG
Memory
AM29F002BT-55JF
Specs
Memory Category Flash; FLASH
Access Time 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
3 suppliers