Manufacturer: STMicroelectronics
Win Source Part Number: 1187113-IRF640
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.nxp.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 125W
Alternative Parts (Cross-Reference): FQP19N20C; PHP18N20E; IRF640; STP19NB20;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial, Portable Devices, Consumer Electronics
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 180mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 72nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1560pF at 25V
N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220
MOSFET N-CH 200V 18A TO220AB
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | 1187113-IRF640 | 497-2759-5-ND | IRF640 |
| Product Name | Electronic Surplus - IRF640 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel |
