STMicroelectronics, Inc. Single FETs, MOSFETs IRF634

Description
N-Channel 250V 8A (Tc) 80W (Tc) Through Hole TO-220
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Description
N-Channel 250V 8A (Tc) 80W (Tc) Through Hole TO-220
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Datasheet
Datasheet Summary
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The IRF634 is an N-channel MOSFET designed for switching applications, with a drain-source voltage rating of 250 V and a continuous drain current of 8 A at 25°C. It is housed in a TO-220 package and has a maximum drain-source on-resistance of 0.45 Ω at a gate-source voltage of 10 V. The device supports a pulsed drain current of 32 A and features a single pulse avalanche energy rating of 300 mJ. Thermal resistance from junction to case is 1.56 °C/W. The storage and operating junction temperature range spans from -65°C to 150°C. It is avalanche rated and meets the specified electrical and thermal criteria outlined for the TO-220 package variant in the series.

Datasheet Summary
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The IRF634 is an N-channel MOSFET designed for switching applications, with a drain-source voltage rating of 250 V and a continuous drain current of 8 A at 25°C. It is housed in a TO-220 package and has a maximum drain-source on-resistance of 0.45 Ω at a gate-source voltage of 10 V. The device supports a pulsed drain current of 32 A and features a single pulse avalanche energy rating of 300 mJ. Thermal resistance from junction to case is 1.56 °C/W. The storage and operating junction temperature range spans from -65°C to 150°C. It is avalanche rated and meets the specified electrical and thermal criteria outlined for the TO-220 package variant in the series.

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRF634ST-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF634ST-ND
Single FETs, MOSFETs IRF634ST-ND
N-Channel 250V 8A (Tc) 80W (Tc) Through Hole TO-220

N-Channel 250V 8A (Tc) 80W (Tc) Through Hole TO-220

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number IRF634ST-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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