STMicroelectronics, Inc. Single IGBTs GWA75H65DRFB2AG

The GWA75H65DRFB2AG is an automotive-grade IGBT with a co-packed high-ruggedness rectifier diode, designed for hard-switching applications in EV/HEV power systems. It is housed in a TO-247 long leads package with a maximum junction temperature of 175 °C and a collector-emitter voltage rating of 650 V. The device has a typical collector-emitter saturation voltage of 1.6 V at 75 A and 25 °C, and a thermal resistance from junction to case of 0.38 °C/W for both the IGBT and diode. It is AEC-Q101 qualified and supports continuous collector current of 75 A at 100 °C. The part features a positive VCE(sat) temperature coefficient, low tail current, and tight parameter distribution.