STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - F11NM80 F11NM80

Manufacturer: STMicroelectronics Win Source Part Number: 066683-F11NM80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 43.6nC @ 10V Max Input Capacitance: 1630pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited