STMicroelectronics, Inc. Single Bipolar Transistors BUT11A

The BUT11A is a silicon NPN power transistor in a TO-220 plastic package designed for high-voltage switching applications such as flyback and forward converters. It has a collector-emitter voltage rating of 450 V, a continuous collector current of 5 A, and a total power dissipation of 83 W at 25°C case temperature. The device has a maximum junction temperature of 150°C and a thermal resistance from junction to case of 1.5 °C/W. Collector-emitter saturation voltage is 1.5 V at 2.5 A collector current and 0.5 A base current, with a DC current gain ranging from 10 to 35 across operating conditions. Turn-on, storage, and fall times are 1 µs, 4 µs, and 0.8 µs respectively under pulsed test conditions.