STMicroelectronics, Inc. Single Bipolar Transistors BULB39D-1

Description
Bipolar (BJT) Transistor NPN 450V 4A 70W Surface Mount D²PAK
  • Single Bipolar Transistors - BULB39D-1-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BULB39D-1 - 1025444-BULB39D-1 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BULB39D-1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 450V 4A 70W Surface Mount D²PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - BULB39D-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BULB39D-1-ND
Single Bipolar Transistors BULB39D-1-ND
Bipolar (BJT) Transistor NPN 450V 4A 70W Surface Mount D²PAK

Bipolar (BJT) Transistor NPN 450V 4A 70W Surface Mount D²PAK

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BULB39D-1 - 1025444-BULB39D-1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BULB39D-1
1025444-BULB39D-1
TRANSISTORS - Transistors (BJT) - Single - BULB39D-1 1025444-BULB39D-1
Manufacturer: STMicroelectronics Win Source Part Number: 1025444-BULB39D-1 Packaging: Cut Reel Mounting: SMD (SMT) Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 450V Max Vce (sat): 1.1V @ 500mA, 2.5A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 10 @ 10mA, 5V Maximum Power Dissipation: 70W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1025444-BULB39D-1
Packaging: Cut Reel
Mounting: SMD (SMT)
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 1.1V @ 500mA, 2.5A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 10 @ 10mA, 5V
Maximum Power Dissipation: 70W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BULB39D-1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BULB39D-1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BULB39D-1
TRANS NPN 450V 4A D2PAK

TRANS NPN 450V 4A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number BULB39D-1-ND 1025444-BULB39D-1 BULB39D-1
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BULB39D-1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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