STMicroelectronics, Inc. IGBT Modules A2C35S12M3

Description
IGBT Module Trench Field Stop Three Phase Inverter with Brake 1200V 35A 250W Chassis Mount ACEPACK™ 2
Request a Quote Datasheet
Description
IGBT Module Trench Field Stop Three Phase Inverter with Brake 1200V 35A 250W Chassis Mount ACEPACK™ 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - 497-17756-ND - DigiKey
Thief River Falls, MN, United States
IGBT Modules
497-17756-ND
IGBT Modules 497-17756-ND
IGBT Module Trench Field Stop Three Phase Inverter with Brake 1200V 35A 250W Chassis Mount ACEPACK™ 2

IGBT Module Trench Field Stop Three Phase Inverter with Brake 1200V 35A 250W Chassis Mount ACEPACK™ 2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - A2C35S12M3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
A2C35S12M3
Discrete Semiconductor Products - Transistors - IGBTs A2C35S12M3
IGBT MOD 1200V 35A 250W ACEPACK2

IGBT MOD 1200V 35A 250W ACEPACK2

Supplier's Site
Sheung Wan, Hong Kong
IGBT Modules
A2C35S12M3
IGBT Modules A2C35S12M3
IGBT Modules ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC

IGBT Modules ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC

Buy Now Datasheet
Igbt, Module, N-Ch, 1.2Kv, 35A; Transistor Polarity Stmicroelectronics - 52AC3528 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Module, N-Ch, 1.2Kv, 35A; Transistor Polarity Stmicroelectronics
52AC3528
Igbt, Module, N-Ch, 1.2Kv, 35A; Transistor Polarity Stmicroelectronics 52AC3528
IGBT, MODULE, N-CH, 1.2KV, 35A; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes

IGBT, MODULE, N-CH, 1.2KV, 35A; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-17756-ND A2C35S12M3 A2C35S12M3 52AC3528
Product Name IGBT Modules Discrete Semiconductor Products - Transistors - IGBTs IGBT Modules Igbt, Module, N-Ch, 1.2Kv, 35A; Transistor Polarity Stmicroelectronics
Package Type Module TO-3
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