STMicroelectronics, Inc. IGBT Modules A1P50S65M2

Description
IGBT Module Trench Field Stop Three Phase Inverter 650V 50A 208W Chassis Mount ACEPACK™ 1
Request a Quote Datasheet
Description
IGBT Module Trench Field Stop Three Phase Inverter 650V 50A 208W Chassis Mount ACEPACK™ 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - 497-18064-ND - DigiKey
Thief River Falls, MN, United States
IGBT Modules
497-18064-ND
IGBT Modules 497-18064-ND
IGBT Module Trench Field Stop Three Phase Inverter 650V 50A 208W Chassis Mount ACEPACK™ 1

IGBT Module Trench Field Stop Three Phase Inverter 650V 50A 208W Chassis Mount ACEPACK™ 1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - A1P50S65M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
A1P50S65M2
Discrete Semiconductor Products - Transistors - IGBTs A1P50S65M2
IGBT MOD 650V 50A 208W ACEPACK1

IGBT MOD 650V 50A 208W ACEPACK1

Supplier's Site
Sheung Wan, Hong Kong
IGBT Modules
A1P50S65M2
IGBT Modules A1P50S65M2
IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC

IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC

Buy Now Datasheet
Igbt Mod, Npn, 650V, 50A, 208W, Module; Transistor Polarity Stmicroelectronics - 84AC0868 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Mod, Npn, 650V, 50A, 208W, Module; Transistor Polarity Stmicroelectronics
84AC0868
Igbt Mod, Npn, 650V, 50A, 208W, Module; Transistor Polarity Stmicroelectronics 84AC0868
IGBT MOD, NPN, 650V, 50A, 208W, MODULE; Transistor Polarity:NPN; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case RoHS Compliant: Yes

IGBT MOD, NPN, 650V, 50A, 208W, MODULE; Transistor Polarity:NPN; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-18064-ND A1P50S65M2 A1P50S65M2 84AC0868
Product Name IGBT Modules Discrete Semiconductor Products - Transistors - IGBTs IGBT Modules Igbt Mod, Npn, 650V, 50A, 208W, Module; Transistor Polarity Stmicroelectronics
Package Type Module TO-3
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