Win Source Part Number: 1355267-A1C15S12M3-F
Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Package: Tray
Product Status: Active
Package / Case: Module
Supplier Device Package: ACEPACK™ 1
Base Product Number: A1C15
Mounting Type: Chassis Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 142.8 W
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
IGBT Type: Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
Input Capacitance (Cies) @ Vce: 985 pF @ 25 V
NTC Thermistor: Yes
Trans IGBT Module N-CH 1200V 15A 142800mW 23-Pin ACEPACK-1 Tray Product overview: A1C15S12M3-F from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 15A, 142800mW. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 15A, 142800mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-A1C15S12M3-F can be used for catalog matching and distributor lookup.
IGBT Module Trench Field Stop Three Phase Inverter with Brake 1200V 15A 142.8W Chassis Mount ACEPACK™ 1
IGBT, MODULE, N-CH, 1.2KV, 15A; Transistor Polarity:N Channel; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:142.8W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
IGBT MOD 1200V 15A ACEPACK1
IGBT Modules PTD HIGH VOLTAGE
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1355267-A1C15S12M3-F | 297-A1C15S12M3-F | 497-17737-ND | 47AC8725 | A1C15S12M3-F | A1C15S12M3-F |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules | 1200V 15A 142800mW IGBT Transistor | IGBT Modules | Igbt, Module, N-Ch, 1.2Kv, 15A; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Modules |
| VCES | 1200 volts |