MOSFET N-CH 600V 9A IPAK Product overview: 12N60 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-12N60 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 148811-12N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 538pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 450 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-12N60 | 148811-12N60 |
| Product Name | 600V 9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 12N60 |
| Polarity | N-Channel | N-Channel; N-Channel |
| PD | 85000 milliwatts | 85000 milliwatts |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |