The GD200HFU120C2S is a 1200 V, 200 A IGBT module with integrated fast anti-parallel diodes, designed for applications such as electronic welding and inductive heating. It features NPT technology, 10 μs short-circuit ruggedness, and a low-inductance case with a DBC-isolated copper baseplate. The module is rated for a maximum junction temperature of 150°C and operates from -40°C to +125°C. It has an isolation voltage of 2500 V RMS and a physical weight of 300 g. The package dimensions and mounting specifications are defined for M5 and M6 screws with torque ranges of 2.5-5.0 N·m and 3.0-5.0 N·m, respectively.
TRANSISTOR, IGBT MODULE, 1.2KV, 262A ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 84AH5719 |
| Product Name | Transistor, Igbt Module, 1.2Kv, 262A Rohs Compliant Starpower |
| Package Type | TO-3 |
