The GD1000HFX170P2S is a 1700 V, 1000 A IGBT module designed for high-power applications such as wind power and converters. It features a 175°C maximum junction temperature, 10 μs short circuit capability, and an isolated copper baseplate using DBC technology. The module has a 1210 g weight and a package dimension consistent with a standard IGBT module housing. It meets a 4000 V RMS isolation voltage rating and operates within a -40°C to +150°C junction temperature range. The device is qualified for high thermal cycling and includes an NTC thermistor for temperature monitoring with a rated resistance of 5.0 kΩ at 25°C.
TRANSISTOR, IGBT MODULE, 1.7KV, 1.604KA ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 84AH5706 |
| Product Name | Transistor, Igbt Module, 1.7Kv, 1.604Ka Rohs Compliant Starpower |
| Package Type | TO-3 |
