The S3M0080120D is a silicon carbide power MOSFET in a TO-247-3 package designed for high-efficiency switching applications such as EV charging, solar inverters, and UPS systems. It has a drain-source voltage rating of 1200 V and a typical on-resistance of 80 mΩ at 25°C with a gate voltage of 18 V. The device supports a continuous drain current of 26 A at 100°C case temperature and a pulsed drain current of 123 A. It features a typical thermal resistance junction-to-case of 0.61 °C/W and operates with a junction temperature range of -55°C to +175°C. The part is AEC-Q101 qualified and uses UL 94 V-0 rated molding resin. Switching losses are minimized with a turn-off energy of 2 µJ and a reverse recovery charge of 190 nC.
SILICON CARBIDE MOSFET, 80MOHM,1
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1655-S3M0080120D-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
