SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S3M0040120K

The S3M0040120K is a 1200 V silicon carbide power MOSFET designed for high-efficiency switching applications such as EV fast charging, solar inverters, and energy storage systems. It is packaged in a TO-247-4 case and features a typical drain-source on-state resistance of 40 mΩ at 25°C. The device supports a continuous drain current of up to 65 A at V_GS = 18 V and 25°C, with a maximum pulsed drain current of 223 A. It has a junction temperature range of -55°C to +175°C and a thermal resistance from junction to case of 0.31 °C/W. The device is AEC-Q101 qualified and complies with UL 94 V-0 for molding resin. Its intrinsic body diode exhibits fast reverse recovery with a typical time of 16 ns at 175°C.