SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S3M0030120N

S3M0030120N is a silicon carbide power MOSFET designed for high-efficiency switching in EV fast charging, on-board chargers, solar inverters, and industrial power supplies. It features a 1200 V drain-source voltage rating, a typ. on-resistance of 30 mΩ at 25°C, and a continuous drain current of 74 A at 25°C case temperature. The device is packaged in a SOT-227 measuring 37.8-38.2 mm by 24.8-25.21 mm, with a thermal resistance junction-to-case of 0.31 °C/W and an operating junction temperature range of -55°C to +175°C. It is AEC-Q101 qualified and uses non-bright tin electroplating. The intrinsic body diode exhibits a reverse recovery time of 16 ns at 25°C and a forward voltage of 3.6 V at 175°C under 20 A current. The gate-source voltage is recommended between -4 V and +18 V, with a maximum dynamic gate-source voltage of ±20 V.