SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S3M0030120J

S3M0030120J is a 1200V silicon carbide power MOSFET in a TO-263-7 package, designed for high-efficiency switching applications such as EV charging, solar inverters, and UPS systems. It has a typ. on-resistance of 30 mΩ at 25°C and 50 mΩ at 175°C, with a continuous drain current of 76 A at 25°C case temperature and 54 A at 100°C. The device features a positive temperature coefficient, fast switching with turn-on and turn-off energies of 212 nJ and 198 nJ respectively, and an intrinsic body diode with reverse recovery time of 16 ns at 175°C. It is AEC-Q101 qualified and meets UL 94 V-0 for molding resin. The TO-263-7 package has dimensions of 9.25 mm × 10.00 mm for the body and 15.00 mm height. Junction temperature range is -55°C to +175°C, with thermal resistance junction-to-case of 0.25 °C/W.