SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S3M0030120D

The S3M0030120D is a silicon carbide power MOSFET designed for high-efficiency switching applications such as EV fast charging, solar inverters, and energy storage systems. It is packaged in a TO-247-3 case with a maximum drain-source voltage of 1200 V and a typical on-resistance of 30 mΩ at 25°C. The device supports a continuous drain current of 74 A at 25°C case temperature and has a junction temperature range of -55°C to +175°C. It features a fast intrinsic body diode with reverse recovery time of 16 ns at 25°C and is AEC-Q101 qualified. Thermal resistance junction-to-case is 0.31 °C/W. The gate-source voltage is rated for static operation from -4 V to +18 V, with recommended turn-on and turn-off voltages of 18 V and -4 V, respectively.