SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S3M0012120D

S3M0012120D is a silicon carbide power MOSFET designed for high-efficiency switching applications such as EV fast charging, solar inverters, and UPS systems. It comes in a TO-247-3 package and has a drain-source voltage rating of 1200 V, with a typical on-resistance of 12 mΩ at 25°C and 16 mΩ at 175°C. The device supports a continuous drain current of up to 155 A at 25°C case temperature and a pulsed current of 330 A. It features a fast intrinsic body diode with a reverse recovery charge of 533 nC and a reverse recovery time of 25 ns. The gate-source voltage is rated from -4 V to +18 V for static operation, with recommended turn-on and turn-off voltages of 18 V and -4 V, respectively. The junction temperature range is -55°C to +175°C, and thermal resistance from junction to case is 0.16°C/W. The device is AEC-Q101 qualified.