SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S2M0120120K

The S2M0120120K is a 1200V silicon carbide power MOSFET designed for high-efficiency power conversion in EV charging, solar inverters, and UPS systems. It is packaged in a TO-247-4 case with a recommended gate voltage range of -5 V to 20 V and a typical on-resistance of 133 mΩ at 20 V gate bias and 25°C. The device supports continuous drain currents up to 21 A at 25°C case temperature and has a junction temperature range of -55°C to +175°C. It features a fast intrinsic body diode with a reverse recovery time of 7.3 ns and meets AEC-Q101 qualification standards. The thermal resistance from junction to case is 0.96°C/W. The molding resin complies with UL 94 V-0.