SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S2M0120120D

The S2M0120120D is a 1200V silicon carbide MOSFET in a TO-247AD package, designed for high-efficiency power conversion in applications such as EV charging, solar inverters, and UPS systems. It has a typical on-resistance of 133 mΩ at 25°C and a continuous drain current of 21 A at 25°C case temperature, or 15 A at 100°C. The device features a fast intrinsic body diode with a reverse recovery time of 7.3 ns and low switching losses, with turn-on and turn-off energies of 62.3 J and 62.7 J respectively. It is AEC-Q101 qualified, with a junction temperature range of -55°C to +175°C and a thermal resistance junction-to-case of 0.96°C/W.