SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S2M0080120K

S2M0080120K is a single silicon carbide power MOSFET in a TO-247-4 package, rated for 1200 V drain-source voltage and 41 A continuous drain current at 25°C, with a typical on-resistance of 77 mΩ. It features fast switching, low switching losses, and a robust intrinsic body diode, suitable for high-frequency energy-efficient applications such as EV charging and solar inverters. The device operates with a junction temperature range of -55°C to 175°C and has a typical thermal resistance from junction to case of 0.65°C/W. The molding resin meets UL 94 V-0 flammability rating.