SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S2M0080120B

The S2M0080120B is a 1200V silicon carbide power MOSFET in a T2PAK package designed for high-efficiency switching applications such as EV charging, solar inverters, and UPS systems. It has a typical on-resistance of 77 mΩ at 20 V gate voltage and 25°C, rising to 137 mΩ at 175°C. The device supports a continuous drain current of 30 A at 25°C case temperature and 21 A at 100°C, with a pulsed current rating of 82 A. The maximum gate-source voltage is 25 V under dynamic conditions, with a recommended gate drive range of -5 V to 20 V. The junction temperature range is -55°C to +175°C, with a thermal resistance of 0.85 °C/W from junction to case. The device is AEC-Q101 qualified and the molding resin complies with UL 94 V-0.