SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S2M0016120N

The S2M0016120N is a 1200V silicon carbide power MOSFET in a SOT-227 package, designed for high-efficiency switching applications such as EV charging, solar inverters, and UPS systems. It features a typical on-resistance of 17 mΩ at 25°C, a continuous drain current of 140 A at 25°C case temperature, and a pulsed drain current rating of 250 A. The device has a positive temperature coefficient for easier paralleling and a robust intrinsic body diode with a reverse recovery time of 15 ns. Thermal resistance from junction to case is 0.29 °C/W, and the junction temperature range is -55°C to +175°C. The part is AEC-Q101 qualified for automotive applications. Internal gate resistance is 1.5 Ω, with total gate charge of 285 nC. The package has a nickel-plated base plate and terminals, with an internally DBC-isolated copper structure.