The Si8275DB-AS1 is a dual isolated gate driver in a 16-pin narrow-body SOIC package, designed for driving MOSFETs, IGBTs, or GaN/FET switches in power supply, inverter, and motor control applications. It supports a 2.5 kV RMS isolation rating per UL1577, with 200 kV/µs common-mode transient immunity and 60 ns maximum propagation delay. The driver operates with an input supply voltage of 2.5-5.5 V and a driver supply voltage of 4.2-30 V, delivering 4 A peak output current. It features separate high- and low-side outputs with overlap protection, a 12 V undervoltage lockout threshold, and a 200 ps peak-to-peak jitter. The device is AEC-Q100 qualified and operates over a temperature range of -40 to 125 °C. It is pin-compatible with industrial-grade variants but manufactured using automotive-specific processes and documented with AIAG-compliant PPAP, IMDS, and CAMDS compliance.
Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO16
| Rochester Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SI8275DB-AS1 |
| Package Type | SOIC16 |