The Si823H8AB-IM1 is a high-side/low-side isolated gate driver with programmable dead time, designed for driving power MOSFETs and IGBTs in automotive and industrial applications. It features a 4.0 A peak sink/source output current, 2.5 kV RMS isolation, and operates with input supply voltages from 3.0 to 5.5 V and driver supply voltages up to 30 V. The device includes undervoltage lockout, over-temperature protection, and a fail-safe low output state upon loss of input power. It is packaged in a DFN-14 case, supports ambient temperatures from -40 to +125 °C, and is certified to AEC-Q100, UL 1577, IEC 62368-1, and RoHS standards.
Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO14
| Rochester Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SI823H8AB-IM1 |
| Package Type | RQFN14 |
