The Si823H5AB-IS1 is a dual-channel isolated gate driver with independent high-side and low-side outputs, designed for driving power MOSFETs and IGBTs in motor control and inverter applications. It features a 4.0 A peak sink and source output current, 2.5 kV RMS isolation, and a maximum propagation delay of 30 ns. The device includes programmable dead time (20-200 ns), over-temperature protection, and undervoltage lockout. It operates from a 3.0 to 5.5 V input supply and supports driver supply voltages up to 30 V. The package is a 16-pin narrow body SOIC (NB SOIC-16), with an operating temperature range of -40 to +125 °C. It meets AEC-Q100 qualification, UL 1577, CSA, VDE, IEC 62368-1, and RoHS standards. The EN pin enables fail-safe default low output. All variants of the Si823Hx family share these core specifications.
Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO16
| Rochester Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SI823H5AB-IS1 |
| Package Type | SOIC16 |
