Skyworks Solutions, Inc. SI823H3CB-IM1

Description
Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO14
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Description
Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO14
Request a Quote
Datasheet
Datasheet Summary
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The Si823H3CB-IM1 is a dual-channel isolated gate driver with high-side/low-side outputs, designed for driving power MOSFETs and IGBTs in motor control and inverter applications. It features a 4.0 A peak output current, 20-200 ns programmable dead time, and active-low fail-safe operation with default low outputs upon input power loss. The device supports up to 5 kV RMS isolation, operates with a 3.0-5.5 V input supply and 5.5-30 V output supply, and includes undervoltage lockout, overtemperature protection, and deglitch functionality. It is packaged in a 14-lead DFN with a 2.5 kV RMS isolation rating, operates from -40 to +125 °C, and is AEC-Q100 qualified with RoHS-compliant construction. The DFN-14 package measures 5 mm × 4 mm (typical).

Datasheet Summary
Powered by GS/AI

The Si823H3CB-IM1 is a dual-channel isolated gate driver with high-side/low-side outputs, designed for driving power MOSFETs and IGBTs in motor control and inverter applications. It features a 4.0 A peak output current, 20-200 ns programmable dead time, and active-low fail-safe operation with default low outputs upon input power loss. The device supports up to 5 kV RMS isolation, operates with a 3.0-5.5 V input supply and 5.5-30 V output supply, and includes undervoltage lockout, overtemperature protection, and deglitch functionality. It is packaged in a 14-lead DFN with a 2.5 kV RMS isolation rating, operates from -40 to +125 °C, and is AEC-Q100 qualified with RoHS-compliant construction. The DFN-14 package measures 5 mm × 4 mm (typical).

Suppliers

Company
Product
Description
Supplier Links
 - SI823H3CB-IM1 - Rochester Electronics
Newburyport, MA, United States
Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO14

Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO14

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SI823H3CB-IM1
Package Type RQFN14
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