The Si823H3CB-IM1 is a dual-channel isolated gate driver with high-side/low-side outputs, designed for driving power MOSFETs and IGBTs in motor control and inverter applications. It features a 4.0 A peak output current, 20-200 ns programmable dead time, and active-low fail-safe operation with default low outputs upon input power loss. The device supports up to 5 kV RMS isolation, operates with a 3.0-5.5 V input supply and 5.5-30 V output supply, and includes undervoltage lockout, overtemperature protection, and deglitch functionality. It is packaged in a 14-lead DFN with a 2.5 kV RMS isolation rating, operates from -40 to +125 °C, and is AEC-Q100 qualified with RoHS-compliant construction. The DFN-14 package measures 5 mm × 4 mm (typical).
Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO14
| Rochester Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SI823H3CB-IM1 |
| Package Type | RQFN14 |