The Si823H1CB-IM1 is a high-side/low-side isolated gate driver with 4.0 A peak sink and source current, designed for driving power MOSFETs and IGBTs in motor control and inverter applications. It features a 5 kV RMS isolation rating, 30 ns maximum propagation delay, and a 125 kV/µs common mode transient immunity. The device includes programmable dead time from 20 to 200 ns, an undervoltage lockout for both input and output sides, and over-temperature protection. The part is housed in a DFN-14 package and operates over a temperature range of -40 to +125 °C. It meets AEC-Q100 qualification and automotive-grade manufacturing requirements, alongside safety certifications including UL 1577, VDE, IEC 62368-1, and CQC. The output stage incorporates a booster circuit for enhanced turn-on performance at the Miller plateau.
Buffer or Inverter Based IGBT/MOSFET Driver, 4A, PDSO14
| Rochester Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SI823H1CB-IM1 |
| Package Type | RQFN14 |
