Shanghai Jidian Electronic Technology Co., Ltd. Transistors BC856DW

Description
65V 200mW 110@2mA,5V 100mA PNP SOT-363 Bipolar (BJT) ROHS
Request a Quote
Description
65V 200mW 110@2mA,5V 100mA PNP SOT-363 Bipolar (BJT) ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - BC856DW - ODG (Origin Data Global)
Shenzhen, China
Transistors
BC856DW
Transistors BC856DW
65V 200mW 110@2mA,5V 100mA PNP SOT-363 Bipolar (BJT) ROHS

65V 200mW 110@2mA,5V 100mA PNP SOT-363 Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number BC856DW
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT MODULE,1 PHASE,FR11,460A,600V CLASS - SK-H1-QOUT-E460 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Fuji Electric Corp. of America
Specs
Transistor Type Bipolar RF
View Details
CSD18563Q5A 60-V N-Channel NexFET Power MOSFET - CSD18563Q5A - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
9 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG75R020M1H - AIMBG75R020M1H - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details