Shanghai Jidian Electronic Technology Co., Ltd. Transistors 2N5551U

Description
160V 500mW 80@10mA,5V 600mA SOT-89-3 Bipolar (BJT) ROHS
  • Transistors - 2N5551U - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
160V 500mW 80@10mA,5V 600mA SOT-89-3 Bipolar (BJT) ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - 2N5551U - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
2N5551U
Transistors 2N5551U
160V 500mW 80@10mA,5V 600mA SOT-89-3 Bipolar (BJT) ROHS

160V 500mW 80@10mA,5V 600mA SOT-89-3 Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 2N5551U
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS205 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS205
View Details
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-01 - Qorvo
Qorvo
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-01
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
3 suppliers
1450A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K4 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1450A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-D1K4
Specs
Transistor Type IGBT
View Details
Transistor - 15310489 - Radwell International
Fuji Electric Corp. of America
Transistor
7MBR50SB060
View Details