SemiQ Inc. Discrete Semiconductor Products - Transistors - IGBTs - Single GPA020A135MN-FD

Description
Win Source Part Number: 1060982-GPA020A135MN -FD Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 1 Power - Max: 223 W Reverse Recovery Time (trr): 425 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A Switching Energy: 2.5mJ (on), 760µJ (off) Input Type: Standard Gate Charge: 180 nC Td (on/off) @ 25°C: 25ns/175ns Test Condition: 600V, 20A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: SemiQ Other Names: 1560-1217-2-ND,1560- 1217-1-ND,1560-1217- 2INACTIVE,1560-1217- 1,1560-1217-2,1560-1 217-5 Product Status: Obsolete
  • Discrete Semiconductor Products - Transistors - IGBTs - Single - 1060982-GPA020A135MN-FD - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - GPA020A135MN-FD - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1060982-GPA020A135MN -FD Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 1 Power - Max: 223 W Reverse Recovery Time (trr): 425 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A Switching Energy: 2.5mJ (on), 760µJ (off) Input Type: Standard Gate Charge: 180 nC Td (on/off) @ 25°C: 25ns/175ns Test Condition: 600V, 20A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: SemiQ Other Names: 1560-1217-2-ND,1560- 1217-1-ND,1560-1217- 2INACTIVE,1560-1217- 1,1560-1217-2,1560-1 217-5 Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - IGBTs - Single - 1060982-GPA020A135MN-FD - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1060982-GPA020A135MN-FD
Discrete Semiconductor Products - Transistors - IGBTs - Single 1060982-GPA020A135MN-FD
Win Source Part Number: 1060982-GPA020A135MN -FD Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 1 Power - Max: 223 W Reverse Recovery Time (trr): 425 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A Switching Energy: 2.5mJ (on), 760µJ (off) Input Type: Standard Gate Charge: 180 nC Td (on/off) @ 25°C: 25ns/175ns Test Condition: 600V, 20A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: SemiQ Other Names: 1560-1217-2-ND,1560- 1217-1-ND,1560-1217- 2INACTIVE,1560-1217- 1,1560-1217-2,1560-1 217-5 Product Status: Obsolete

Win Source Part Number: 1060982-GPA020A135MN-FD
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 1
Power - Max: 223 W
Reverse Recovery Time (trr): 425 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
Switching Energy: 2.5mJ (on), 760µJ (off)
Input Type: Standard
Gate Charge: 180 nC
Td (on/off) @ 25°C: 25ns/175ns
Test Condition: 600V, 20A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: SemiQ
Other Names: 1560-1217-2-ND,1560-1217-1-ND,1560-1217-2INACTIVE,1560-1217-1,1560-1217-2,1560-1217-5
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - GPA020A135MN-FD - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
GPA020A135MN-FD
Discrete Semiconductor Products - Transistors - IGBTs GPA020A135MN-FD
IGBT 1350V 40A 223W TO3PN

IGBT 1350V 40A 223W TO3PN

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1060982-GPA020A135MN-FD GPA020A135MN-FD
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs
VCES 1350 volts
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