SemiQ Inc. Single FETs, MOSFETs GP3T080A120J

The GP3T080A120J is a 1200V silicon carbide MOSFET in a TO-263-7L package, designed for high-efficiency switching applications such as solar inverters, EV charging stations, and motor drives. It has a continuous drain current of 33 A at 25°C case temperature and a maximum on-resistance of 100 mΩ at 10 A and 25°C, increasing to 132 mΩ at 175°C. The device supports a peak pulsed drain current of 70 A and is rated for a maximum junction temperature of 175°C. It features a single pulse avalanche energy rating of 160 mJ and a thermal resistance from junction to case of 0.75-0.97 °C/W. The package has dimensions of 9.03-9.13 mm in length, 10.13-10.23 mm in width, and 15.04-17.12 mm in height. The part is RoHS compliant and tested to exceed 1400V drain-source voltage.