SemiQ Inc. Single FETs, MOSFETs GP3T080A120H

The GP3T080A120H is a 1200V silicon carbide MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as solar inverters, EV charging stations, and motor drives. It has a continuous drain current of 32 A at TC=25°C and 23 A at TC=100°C, with a drain-source on-resistance of 80 mΩ at 25°C and 132 mΩ at 175°C. The device supports a maximum junction temperature of 175°C, features an avalanche energy rating of 160 mJ, and includes a driver source pin for improved gate control. Thermal resistance from junction to case is specified at 0.81 to 1.02 °C/W. The package measures 23.30 to 23.60 mm in length and 15.75 to 16.13 mm in width. The part is RoHS compliant and rated for operation from -55°C to 175°C.