SemiQ Inc. Single FETs, MOSFETs GP3T040A120TS

The GP3T040A120TS is a 1200V silicon carbide MOSFET in a TSPAK package, designed for high-efficiency switching applications such as solar inverters, EV charging, and motor drives. It has a continuous drain current of 50 A at 25°C and 36 A at 100°C, with a maximum drain-source on-resistance of 52 mΩ at 20 A and 25°C, rising to 63 mΩ at 175°C. The device features a ceramic-isolated back paddle for top-side cooling, a driver source pin for gate driving, and is rated for 330 mJ single-pulse avalanche energy. Thermal resistance from junction to case is 0.83 to 0.95 °C/W, and isolation voltage is 3000 V. It operates from -55°C to 175°C junction temperature and is RoHS compliant.