SemiQ Inc. Single FETs, MOSFETs GP3T014A120H

The GP3T014A120H is a 1200V silicon carbide MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as solar inverters, EV charging, and motor drives. It has a continuous drain current of 133 A at TC=25°C and 96 A at TC=100°C, with a maximum drain-source on-resistance of 21 mΩ at 50 A and 125°C, rising to 26 mΩ at 175°C. The device is rated for a maximum junction temperature of 175°C and features an avalanche energy rating of 800 mJ. Thermal resistance from junction to case is 0.26 to 0.31 °C/W. The package measures 23.30 to 23.60 mm in length, 15.75 to 16.13 mm in width, and 4.83 to 5.21 mm in height. It meets RoHS 2 compliance and includes a driver source pin for enhanced gate control.