GCMX2P3B120S7B1 is a 1200V silicon carbide half-bridge module designed for high-efficiency power conversion in applications such as photovoltaic inverters, EV chargers, and energy storage systems. It features a 62mm footprint with a height of 17mm and an isolated baseplate for direct heatsink mounting. The module includes SiC MOSFETs with a continuous drain current of 511A at TC=25°C and a maximum junction temperature of 175°C. The on-resistance is 2.4mΩ at 25°C and 300A, with a thermal resistance from junction to case of 0.110°C/W. The package supports a gate-source voltage of -4.5V to +18V, with Kelvin source connections for stable switching. It meets RoHS3 compliance and has an isolation voltage of 4000V. The module includes an NTC thermistor for temperature monitoring with a nominal resistance of 5kΩ at 25°C.
GEN3 1200V 2.3M SIC MOSFET HALF
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX2P3B120S7B1-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
