GCMX080A120B2H1P is a 1200V silicon carbide full-bridge module for high-power switching applications such as photovoltaic inverters and energy storage systems. It is packaged in a B2 case with press-fit terminals and direct heatsink mounting. The device has a continuous drain current of 27 A at 25°C case temperature and a drain-source on-resistance of 77 mΩ at 20V gate drive. Its junction-to-case thermal resistance is 1.07-1.26°C/W, and it supports a maximum junction temperature of 175°C. The module includes a Kelvin source connection for stable operation, and its isolation voltage is 2500 V RMS. It incorporates an integrated NTC thermistor with a resistance of 5.0 kΩ at 25°C.
MOSFET 4N-CH 1200V 27A
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX080A120B2H1P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
