The GCMX034B120B2H2P is a 1200V silicon carbide (SiC) full-bridge module designed for high-voltage power conversion applications such as photovoltaic inverters and energy storage systems. It is housed in a B2H2 package with press-fit terminals and features split DC negative terminals for direct heatsink mounting. The device has a maximum continuous drain current of 49 A at 25°C case temperature and a drain-source on-resistance of 34 mΩ at 25°C and 18 V gate voltage. Junction temperature operates up to 175°C, with a thermal resistance from junction to case of 0.80-0.94 °C/W. The module includes an integrated NTC thermistor with 5 kΩ resistance at 25°C and meets RoHS compliance. All components are tested above 1350 V, and the package provides 3000 V isolation voltage.
GEN3 1200V 34M SIC MOSFET FULL B
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX034B120B2H2P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
